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It can be configured as either a PNP transistor or an NPN transistor which can be constructed as either a three-layer sandwich as shown in Figure 10(a) or as a planar device on a semiconductor wafer as shown in Figure 1(b).

The BJT is so named because its operation involves both electrons and holes. They constituted what is arguably the first step in the microelectronics revolution and Shockley, Brattain and Bardeen were awarded the Nobel Prize in Physics in 1956 for this invention.

Bipolar junction transistors (BJTs) were invented in late 1947 by William Shockley, Walter Brattain and John Bardeen at AT&T Bell Laboratories. Transistors such as the one shown in Figure 1 are called bipolar junction transistors. If we take two P-N junction diodes and physically join them in a back-to-back manner as shown in Figure 1, we can produce the most fundamental of microelectronic devices - a transistor. The P-N junction diode is the simplest electronic device that can be built using semiconducting materials (with the exception of a resistor).